? 2006 ixys all rights reserved polarhv tm hiperfet power mosfet v dss = 600 v i d25 = 36 a r ds(on) 190 m ? ? ? ? ? t rr 200 ns n-channel enhancement mode avalanche rated fast intrinsic diode features l international standard packages l fast recovery diode l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = 0.5 i d25 190 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 80 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 650 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247 & to-264) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g to-264 10 g t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c s g d (tab) to-264 aa (ixfk) g = gate d = drain s = source tab = drain g d s to-247 (ixfh) d (tab) g s to-268 (ixft) case style d (tab) ds99383e(02/06) ixfh 36n60p ixfk 36n60p ixft 36n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 36n60p ixfk 36n60p ixft 36n60p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 25 39 s c iss 5800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 570 pf c rss 30 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 i d25 25 ns t d(off) r g =2 ? (external) 80 ns t f 22 ns q g(on) 102 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 34 nc q gd 36 nc r thjc 0.19 c/w r thcs to-247 0.21 c/w r thcs to-264 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 80 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 200 ns q rm v r = 100v 0.8 c i rm 6.0 a to-268 (ixft)outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-264 (ixfk) outline to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc 1 2 3
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50-25 0 255075100125150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 102030405060708090 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v ixfh 36n60p ixfk 36n60p ixft 36n60p
ixys reserves the right to change limits, test conditions, and dimensions. ixfh 36n60p ixfk 36n60p ixft 36n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 3040 5060 7080 90100110 q g - nanocoulombs v g s - volts v ds = 300v i d = 18a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 10203040506070 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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